PLASMA ETCHER CAPITAL EQUIPEMENT DESIGN TRENDSBROWN HL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 239-241Article

PLASMA ETCHING FOR DESMEARING AND ETCHBACKMARKSTEIN HW.1980; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1980; VOL. 20; NO 1; PP. 65-68; (3 P.)Article

PLASMA ETAH MAKES ITS MARK.ALTMAN L.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 26; PP. 56Article

EVALUATION OF A PROCESS FOR ACHIEVING LOW BETWEEN-METAL CONTACT RESISTANCE IN PLASMA ETCHED POLYIMIDE VIASSMITH PK; HERNDON TO; BURKE RL et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 225-227; BIBL. 4 REF.Article

VACUUM SYSTEMS CONSIDERATIONS FOR PLASMA ETCHING EQUIPMENTLAM DK; KOCH GR.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 99-101; BIBL. 5 REF.Article

PLASMA PROCESSING - AN ART OR A SCIENCE.JACOB A.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 151-153Article

PLASMA-ASSISTED ETCHINGCOBURN JW.1982; PLASMA CHEM. PLASMA PROCESS.; ISSN 507814; USA; DA. 1982; VOL. 2; NO 1; PP. 1-41; BIBL. 193 REF.Article

A STUDY OF SI PLASMA ETCHING IN CF₄+O₂ GAS WITH A PLANAR-TYPE REACTORKAWATA H; SHIBANO T; MURATA K et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2720-2726; BIBL. 13 REF.Article

TRIODE PLASMA ETCHINGMINKIEWICZ VJ; CHAPMAN BN.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 192-193; BIBL. 9 REF.Article

NEW DEVELOPMENTS IN PLASMA ETCHING EQUIPMENT.MARKSTEIN HW.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 5; PP. 55-61 (6P.)Article

PLASMA PROCESS DEVELOPMENT AND MONITORING VIA MASS SPECTROMETRY.BUNYARD GB; RABY BA.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 12; PP. 53-57; BIBL. 3 REF.Article

AN ALL DRY MASK MAKING PROCESS BY REVERSE GAS PLASMA ETCHINGYAMAZAKI T; TANAKA K; NAKATA H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1518-1519; BIBL. 6 REF.Article

SELECTIVE ETCHING OF SI RELATIVE TO SIO₂ WITHOUT UNDERCUTTING BY CBRF₃ PLASMAMATSUO S.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 768-770; BIBL. 7 REF.Article

PLASMA ETCHING OF FILMS AT HIGH RATES.HEINECKE RAH.1978; SOLID STATE TECHNOL.; U.S.A.; DA. 1978; VOL. 21; NO 4; PP. 104-106; BIBL. 7 REF.Article

SINGLE WAFER PLASMA ETCHING. II: SIO₂: ETCHING MECHANISMS AND CHARACTERISTICSMULLINS C.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 88-92; BIBL. 5 REF.Article

SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDSCOBURN JW; KAY E.1979; I.B.M. J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 33-41; BIBL. 24 REF.Article

THE VERSATILE TECHNIQUE OF RF PLASMA ETCHING. I. THE ETCH PROFILE.JACOB A.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 9; PP. 70-73; BIBL. 4 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

PROFILE CONTROL WITH D-C BIAS IN PLASMA ETCHINGBRUCE RH; REINBERG AR.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 393-396; BIBL. 8 REF.Article

DRY ETCH RESISTANCE OF ORGANIC MATERIALSGOKAN H; ESHO S; OHNISHI Y et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 143-146; BIBL. 8 REF.Article

MASK CONSIDERATIONS IN THE PLASMA ETCHING OF ALUMINUMTRACY CJ; MATTOX R.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 83-88; BIBL. 13 REF.Article

A DRY ETCHING TECHNIQUE USING ELECTRON BEAM RESIST-PBSYAMAZAKI T; WATAKABE Y; SUZUKI Y et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1859-1861; BIBL. 2 REF.Article

A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES. II: APPLICATION TO DEPOSITION AND ETCHINGOLDHAM WG; NEUREUTHER AR; CHIAKANG SUNG et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 520-524; BIBL. 9 REF.Article

ANISOTROPIC PLASMA ETCHING OF SEMICONDUCTOR MATERIALSPARRY PD; RODDE AF.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 4; PP. 125-132; BIBL. 37 REF.Article

ETCHING CHARACTERISTICS OF PHOSPHORUS CONTAINING POLYCRYSTALLINE SILICON IN A CF₄ PLASMA.JINNO K; KINOSHITA H; MATSUMOTO Y et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 5; PP. 827-828; BIBL. 10 REF.Article